Title :
Electrical characterisation of spin-coated a-IZO thin-film transistors
Author :
Deam, L. ; Lee, Kin Keung ; McCallum, J.C. ; Singh, Bawa
Author_Institution :
Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia
Abstract :
Electrical measurements have been performed on amorphous metal oxide spin-coated thin-film transistors. The conducting layer is amorphous indium zinc oxide (a-IZO) which has been processed at low temperatures. We are looking to improve material and device properties, in particular carrier mobility, using electrical characterisation techniques such as deep-level transient spectroscopy (DLTS) and Hall measurements.
Keywords :
deep level transient spectroscopy; indium compounds; spin coating; thin film transistors; zinc compounds; Hall measurements; InZnO; amorphous metal oxide spin-coated thin-film transistors; carrier mobility; conducting layer; deep-level transient spectroscopy; device properties; electrical characterisation techniques; electrical measurements; material properties; Electric variables measurement; Films; Indium; Pollution measurement; Temperature measurement; Thin film transistors;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472434
