High-power, high-linearity photodiodes for RF photonics

Author

Campbell, Joe C. ; Beling, Andreas ; Piels, Molly ; Yang Fu ; Cross, Allen ; Qiugui Zhou ; Peters, Jochen ; Bowers, John E. ; Zhi Li

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

215

Lastpage

216

Abstract

High-power, high-linearity photodiodes are essential components for photonic microwave applications since they have the potential to improve many aspects of the link performance such as link gain, noise figure, and spurious free dynamic range. This talk will describe photodiode structures that we have developed to achieve RF output power levels as high as 0.75 W at 15 GHz and high linearity, as measured by the output third-order intercept point (OIP3), > 55 dBm. Recent work has focused on extending operation to higher frequencies and heterogeneous integration with Si photonic circuits.

Keywords

elemental semiconductors; integrated optics; microwave photonics; photodiodes; silicon; RF photonics; frequency 15 GHz; link gain; microwave photonics; noise figure; photodiodes; photonic circuits; power 0.75 W; spurious free dynamic range; Bandwidth; Flip chip; Photodiodes; Photonics; Power generation; Radio frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472437

Filename

6472437