Title :
Fabrication of single photon centres in silicon carbide
Author :
Johnson, Brett C. ; Castelletto, S. ; Ohshima, T. ; Umeda, Tomohiro
Author_Institution :
Radiat. Effects Group, Japan Atomic Energy Agency, Takasaki, Japan
Abstract :
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC) is reported. The photo-physical properties of the defect, having emission around 700 nm is presented.
Keywords :
colour centres; photons; silicon compounds; SiC; bright room temperature single photon emission; bulk silicon carbide; isolated defects; photo-physical property; single photon centre fabrication; Carbon dioxide; Diamonds; Educational institutions; Photonics; Physics; Silicon carbide; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472438
