• DocumentCode
    600084
  • Title

    Influence of processing parameter on nanoscale anodic oxidation by AFM

  • Author

    Yanbing Leng ; Lianhe Dong ; Yanjun Sun ; Zhe Chen ; Zhenfang Ma

  • Author_Institution
    Sch. of Opto-Electron. Eng., Changchun Univ. of Sci. & Technol., Changchun, China
  • fYear
    2012
  • fDate
    Aug. 29 2012-Sept. 1 2012
  • Firstpage
    420
  • Lastpage
    424
  • Abstract
    Combining the pressure sensor´s oxidation insulating nanostructure fabrication this paper studied the impact of bias voltage, ambient temperature and humidity on the size of oxide dots during the AFM-based anodic oxidation nano-fabrication. Experimental results show that the size of oxide dots increases with the increasing bias voltage and ambient humidity, but too high bias voltage and ambient temperature will cause staircase phenomena on the surface of oxide dot; ambient temperature 22 °C, bias voltage 8V, humidity 50% and oxidation time 8s are relatively suitable processing parameters for the oxidation fabrication of n-type Si (100).
  • Keywords
    anodisation; atomic force microscopy; elemental semiconductors; nanofabrication; nanostructured materials; pressure sensors; silicon; AFM-based anodic oxidation nanofabrication; Si; ambient humidity; bias voltage impact; insulating nanostructure fabrication; n-type Si (100) surface; nanoscale anodic oxidation; nanostructure temperature; oxidation time; oxide dot size; oxide dot surface; pressure sensor oxidation; processing parameters; staircase phenomena; temperature 22 degC; time 8 s; voltage 8 V; Fabrication; Humidity; Nanoscale devices; Oxidation; Silicon; Surface morphology; Surface treatment; AFM; anodic oxidation; nanoscale;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2012 International Conference on
  • Conference_Location
    Shaanxi
  • Print_ISBN
    978-1-4673-4588-0
  • Electronic_ISBN
    978-1-4673-4589-7
  • Type

    conf

  • DOI
    10.1109/3M-NANO.2012.6473008
  • Filename
    6473008