DocumentCode
600084
Title
Influence of processing parameter on nanoscale anodic oxidation by AFM
Author
Yanbing Leng ; Lianhe Dong ; Yanjun Sun ; Zhe Chen ; Zhenfang Ma
Author_Institution
Sch. of Opto-Electron. Eng., Changchun Univ. of Sci. & Technol., Changchun, China
fYear
2012
fDate
Aug. 29 2012-Sept. 1 2012
Firstpage
420
Lastpage
424
Abstract
Combining the pressure sensor´s oxidation insulating nanostructure fabrication this paper studied the impact of bias voltage, ambient temperature and humidity on the size of oxide dots during the AFM-based anodic oxidation nano-fabrication. Experimental results show that the size of oxide dots increases with the increasing bias voltage and ambient humidity, but too high bias voltage and ambient temperature will cause staircase phenomena on the surface of oxide dot; ambient temperature 22 °C, bias voltage 8V, humidity 50% and oxidation time 8s are relatively suitable processing parameters for the oxidation fabrication of n-type Si (100).
Keywords
anodisation; atomic force microscopy; elemental semiconductors; nanofabrication; nanostructured materials; pressure sensors; silicon; AFM-based anodic oxidation nanofabrication; Si; ambient humidity; bias voltage impact; insulating nanostructure fabrication; n-type Si (100) surface; nanoscale anodic oxidation; nanostructure temperature; oxidation time; oxide dot size; oxide dot surface; pressure sensor oxidation; processing parameters; staircase phenomena; temperature 22 degC; time 8 s; voltage 8 V; Fabrication; Humidity; Nanoscale devices; Oxidation; Silicon; Surface morphology; Surface treatment; AFM; anodic oxidation; nanoscale;
fLanguage
English
Publisher
ieee
Conference_Titel
Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2012 International Conference on
Conference_Location
Shaanxi
Print_ISBN
978-1-4673-4588-0
Electronic_ISBN
978-1-4673-4589-7
Type
conf
DOI
10.1109/3M-NANO.2012.6473008
Filename
6473008
Link To Document