DocumentCode
600311
Title
310GHz gain-bandwidth product Ge/Si avalanche photodetector by selective epitaxial growth
Author
Ning Duan ; Tsung-Yang Liow ; Lim, Andy Eu-Jin ; Liang Ding ; Lo, G.Q.
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res., Singapore, Singapore
fYear
2012
fDate
4-8 March 2012
Firstpage
1
Lastpage
3
Abstract
We report a normal incident Ge/Si avalanche photodiode by selective epitaxial growth. By eliminating germanium impact-ionization at high gain, high responsivity of 12A/W and large gain-bandwidth product of 310GHz have been achieved at 1550nm.
Keywords
avalanche photodiodes; elemental semiconductors; epitaxial growth; germanium; photodetectors; silicon; Ge-Si; avalanche photodetector; bandwidth 310 GHz; gain-bandwidth product; normal incident avalanche photodiode; responsivity; selective epitaxial growth; wavelength 1550 nm; Absorption; Avalanche photodiodes; Bandwidth; Electric fields; Gain; Silicon; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location
Los Angeles, CA
ISSN
pending
Print_ISBN
978-1-4673-0262-3
Type
conf
Filename
6476133
Link To Document