Title :
310GHz gain-bandwidth product Ge/Si avalanche photodetector by selective epitaxial growth
Author :
Ning Duan ; Tsung-Yang Liow ; Lim, Andy Eu-Jin ; Liang Ding ; Lo, G.Q.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res., Singapore, Singapore
Abstract :
We report a normal incident Ge/Si avalanche photodiode by selective epitaxial growth. By eliminating germanium impact-ionization at high gain, high responsivity of 12A/W and large gain-bandwidth product of 310GHz have been achieved at 1550nm.
Keywords :
avalanche photodiodes; elemental semiconductors; epitaxial growth; germanium; photodetectors; silicon; Ge-Si; avalanche photodetector; bandwidth 310 GHz; gain-bandwidth product; normal incident avalanche photodiode; responsivity; selective epitaxial growth; wavelength 1550 nm; Absorption; Avalanche photodiodes; Bandwidth; Electric fields; Gain; Silicon; Temperature measurement;
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
Print_ISBN :
978-1-4673-0262-3
