DocumentCode
600573
Title
Low-voltage, low-loss, multi-Gb/s silicon micro-ring modulator based on a MOS capacitor
Author
Van Campenhout, J. ; Pantouvaki, M. ; Verheyen, P. ; Selvaraja, Shankar ; Lepage, G. ; Hui Yu ; Lee, Wei-Jen ; Wouters, Jan ; Goossens, D. ; Moelants, M. ; Bogaerts, W. ; Absil, P.
Author_Institution
Imec, Leuven, Belgium
fYear
2012
fDate
4-8 March 2012
Firstpage
1
Lastpage
3
Abstract
Optical modulation with 8dB extinction ratio and 3dB insertion loss is achieved by applying a 1.5-Vpp drive voltage to a 10-μm ring with embedded MOS capacitor. Open-eye diagrams are obtained at 3Gbps.
Keywords
MOS capacitors; electro-optical modulation; elemental semiconductors; silicon; Si; bit rate 3 Gbit/s; embedded MOS capacitor; extinction ratio; insertion loss; open-eye diagrams; optical modulation; silicon microring modulator; size 10 mum; voltage 1.5 V; Erbium; High-speed optical techniques; Optical modulation; Optical resonators; Optical waveguides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location
Los Angeles, CA
ISSN
pending
Print_ISBN
978-1-4673-0262-3
Type
conf
Filename
6476396
Link To Document