DocumentCode :
600573
Title :
Low-voltage, low-loss, multi-Gb/s silicon micro-ring modulator based on a MOS capacitor
Author :
Van Campenhout, J. ; Pantouvaki, M. ; Verheyen, P. ; Selvaraja, Shankar ; Lepage, G. ; Hui Yu ; Lee, Wei-Jen ; Wouters, Jan ; Goossens, D. ; Moelants, M. ; Bogaerts, W. ; Absil, P.
Author_Institution :
Imec, Leuven, Belgium
fYear :
2012
fDate :
4-8 March 2012
Firstpage :
1
Lastpage :
3
Abstract :
Optical modulation with 8dB extinction ratio and 3dB insertion loss is achieved by applying a 1.5-Vpp drive voltage to a 10-μm ring with embedded MOS capacitor. Open-eye diagrams are obtained at 3Gbps.
Keywords :
MOS capacitors; electro-optical modulation; elemental semiconductors; silicon; Si; bit rate 3 Gbit/s; embedded MOS capacitor; extinction ratio; insertion loss; open-eye diagrams; optical modulation; silicon microring modulator; size 10 mum; voltage 1.5 V; Erbium; High-speed optical techniques; Optical modulation; Optical resonators; Optical waveguides; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
ISSN :
pending
Print_ISBN :
978-1-4673-0262-3
Type :
conf
Filename :
6476396
Link To Document :
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