DocumentCode
600624
Title
Low temperature wafer bonding of silicon to InP and silicon to LiNbO3 using self-assembled monolayers
Author
Artel, V. ; Bakish, Idan ; Kraus, Thomas ; Shubely, M. ; Ben-Ezra, Y. ; Shekel, E. ; Zach, S. ; Zadok, Avi ; Sukenik, C.N.
Author_Institution
Dept. of Chem. & Inst. for nano-Technol. & Adv. Mater., Bar-Ilan Univ., Ramat-Gan, Israel
fYear
2012
fDate
4-8 March 2012
Firstpage
1
Lastpage
3
Abstract
Procedures for wafer bonding between silicon and InP and between silicon and LiNbO3 at temperatures below 120 °C are reported. The bonding is based on the deposition of functionalized, organic self assembled monolayers.
Keywords
III-V semiconductors; elemental semiconductors; indium compounds; integrated optoelectronics; lithium compounds; niobium compounds; silicon; wafer bonding; InP; LiNbO3; Si; low temperature wafer bonding; self-assembled monolayers; Bonding; Chemistry; Indium phosphide; Lithium niobate; Silicon; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location
Los Angeles, CA
ISSN
pending
Print_ISBN
978-1-4673-0262-3
Type
conf
Filename
6476449
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