DocumentCode
600719
Title
25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure for 70°C operation
Author
Sakiano, G. ; Takiguchi, Tetsuya ; Hokama, Y. ; Nagira, T. ; Yamaguchi, Hitoshi ; Ishimura, E. ; Sugitatsu, A. ; Shimura, Toshihiro
Author_Institution
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
fYear
2012
fDate
4-8 March 2012
Firstpage
1
Lastpage
3
Abstract
25.8Gbps Direct Modulation AlGaInAs DFB lasers with Ru-doped InP Buried Heterostructure were fabricated for the first time. The lasers achieved high output power and clear eye opening at 70°C and are promising for uncooled operation.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; optical communication equipment; optical modulation; ruthenium; semiconductor lasers; AlGaInAs; InP:Ru; bit rate 25.8 Gbit/s; buried heterostructure; direct modulation DFB lasers; temperature 70 C; uncooled operation; Distributed feedback devices; Indium phosphide; Modulation; Power demand; Power generation; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location
Los Angeles, CA
ISSN
pending
Print_ISBN
978-1-4673-0262-3
Type
conf
Filename
6476544
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