DocumentCode :
600838
Title :
Reducing turn-on dissipation of RSD from application
Author :
Liang, Lin ; Wei, Quan ; Hong, Wu ; Liu, Xueqing ; Yu, Yuehui
Author_Institution :
Department of Electronic Science & Technology, Huazhong University of Science & Technology No.1037, Luoyu Road, Wuhan 430074, China
fYear :
2012
fDate :
3-7 June 2012
Firstpage :
73
Lastpage :
76
Abstract :
The work reducing turn-on dissipation of the Reversely Switched Dynistor(RSD) from application done in our group is reported in this paper. By establishing the two-dimensional numerical model of RSD, the extra charge amount in the p and n base region is found to be only about 24.75% of the integral value of current at the end of triggering, so the RSD should be over pre charged in order to reduce the turn-on voltage. A two-step method is in favor of increasing the extra plasma density in the base region. Both the simulation and experimental results show that the turn-on characteristics of RSD are better by the two-step method than the traditional discharge method. There exists a minimum for the turn-on voltage at a certain triggering time, so well controlling the triggering time is another way of reducing turn-on dissipation.
Keywords :
over pre charging; reversely switched dynistor; triggering time; turn-on dissipation; two-step method;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Modulator and High Voltage Conference (IPMHVC), 2012 IEEE International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4673-1222-6
Type :
conf
DOI :
10.1109/IPMHVC.2012.6518683
Filename :
6518683
Link To Document :
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