To electrically locate gate oxide defects in dual-gate technologies for various high-voltage domains

This paper proposes and verifies a new concept, “oxide layer slicing”, for electrically locating gate oxide defects within highly integrated dual-gate technologies. The discrepancy of defectivity between thin and thick gate oxides provides a quick and unique insight of the physical location and even the distribution of the defects, thus significantly relieving the efforts of searching a defective source for process improvements.