A low voltage CMOS voltage reference based on partial compensation of MOSFET threshold voltage and mobility using current subtraction

Author

Toledo, L.E. ; Petrashin, P.A. ; Lancioni, W.J. ; Dualibe, F.C. ; Canali, L.R.

Author_Institution

Fac. de Ing., Univ. Catolica de Cordoba, Cordoba, Argentina

fYear

2013

fDate

Feb. 27 2013-March 1 2013

Firstpage

1

Lastpage

4

Abstract

A novel scheme for a CMOS low-voltage reference is proposed. It uses current subtraction between the currents generated by two instances of the same current generator circuit, each one configured with different magnitude and temperature coefficients. Temperature stability is achieved owing to the partial compensation of the MOSFET threshold voltage and mobility temperature effects. For a nominal reference voltage of 436.5 mV, SPICE simulation reveals a ±38.2 ppm/°C temperature coefficient within the range of -20 °C to 100°C.

Keywords

CMOS integrated circuits; MOSFET; circuit stability; compensation; reference circuits; MOSFET threshold voltage; SPICE simulation; current generator circuit; current subtraction; low voltage CMOS voltage reference; mobility temperature effect; partial compensation; temperature -20 degC to 100 degC; temperature stability; voltage 436.5 mV; CMOS integrated circuits; Generators; Low voltage; Resistors; Temperature; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (LASCAS), 2013 IEEE Fourth Latin American Symposium on

Conference_Location

Cusco

Print_ISBN

978-1-4673-4897-3

Type

conf

DOI

10.1109/LASCAS.2013.6519024

Filename

6519024