DocumentCode :
601069
Title :
A motion detection pixel system using an inductorless UWB transmitter on standard 0.35µm/CMOS technology
Author :
da Silva, Miguel Mira ; Neto, J.F. ; Moreira, L.C. ; Swart, J.W.
Author_Institution :
Analog & Digital Integrated Circuits Project Lab., Catholic Univ. of Santos, Santos, Brazil
fYear :
2013
fDate :
Feb. 27 2013-March 1 2013
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a CMOS pixel motion detector based on a current-mode APS (Active Pixel Sensor) topology with wireless capability using an Impulse Radio - Ultra Wide Band (IR-UWB) in standard 0.35μm CMOS technology for applications in image sensor networks. A pixel was designed with a transmission gate to control one copier cell in order to compare different integration times. The pixel output is a digital signal proportional to the difference between the two currents. The proposed IR-UWB has a simple architecture, without inductors and carrier modulators. It is based on parallel pulse generator blocks that produce Gaussian pulses, and a pulse shaping stage which adjusts the pulse amplitude, below the FCC -41.3dBm floor. The transmitter exhibits as main characteristics: output pulse of 408ps wide at 4.90GHz, and voltage amplitude of 144mVpp, an average power is only of 7.15μW/pulse at 170MHz PRF (Pulse Repetition Frequency). The whole circuit has been simulated using LTSpice and the results demonstrate the circuit capability to operate as a motion detector. The complete circuit pixel occupies a very small area of 120μm × 115μm.
Keywords :
CMOS image sensors; image motion analysis; ultra wideband communication; CMOS pixel motion detector; Gaussian pulses; IR-UWB; LTSpice; active pixel sensor; copier cell control; current-mode APS topology; digital signal; frequency 170 MHz; frequency 4.90 GHz; image sensor networks; impulse radio-ultrawide band; inductorless UWB transmitter; integration times; motion detection pixel system; parallel pulse generator blocks; pulse amplitude; pulse repetition frequency; pulse shaping stage; size 0.35 mum; standard CMOS technology; transmission gate; voltage 144 mV; CMOS integrated circuits; Computer architecture; Detectors; Inverters; Pulse generation; Transistors; Transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (LASCAS), 2013 IEEE Fourth Latin American Symposium on
Conference_Location :
Cusco
Print_ISBN :
978-1-4673-4897-3
Type :
conf
DOI :
10.1109/LASCAS.2013.6519056
Filename :
6519056
Link To Document :
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