Title :
Analysis of the effects of coupling through substrate and the calculus of the Q factor
Author :
Rios, E.T. ; Garcia, S.C.S. ; Moreira, L.C. ; Torres, R.T. ; Van Noije, W.A.M.
Author_Institution :
Univ. Popular Autonoma del Estado de Puebla, Puebla, Mexico
fDate :
Feb. 27 2013-March 1 2013
Abstract :
A comparison of Y-parameters and S-parameters methodologies for the calculus of the quality factor (Q) in integrated inductors, is analyzed in this paper. For this reason two inductors are compared, one with low (planar inductor) and another with high (cross inductor) electric field coupling effects, in order to determine its influence on the Q calculus. The experimental results shows that assumptions made in Y-parameters Q calculus methodology can overestimate it value. The analysis was done over a 0.35μm CMOS technology using S-parameter measurements up to 10 GHz.
Keywords :
CMOS integrated circuits; Q-factor; S-parameters; inductors; CMOS technology; Q factor calculus; S-parameter methodology; Y-parameter methodology; coupling effect analysis; cross inductor; high-electric field coupling effect; integrated inductors; low-electric field coupling effect; planar inductor; quality factor; size 0.35 mum; Calculus; Couplings; Inductance; Inductors; Q-factor; Scattering parameters; Spirals;
Conference_Titel :
Circuits and Systems (LASCAS), 2013 IEEE Fourth Latin American Symposium on
Conference_Location :
Cusco
Print_ISBN :
978-1-4673-4897-3
DOI :
10.1109/LASCAS.2013.6519070
