Fully integrated single-inductor multiple-output (SIMO) DC-DC converter in CMOS 65 nm technology

Author

Soto, A.J. ; Lindstrom, E.O. ; Oliva, A.R. ; Mandolesi, P.S. ; Dualibe, F.C.

Author_Institution

Depto. de Ing. Electr. y de Computadoras, Univ. Nac. del Sur, Bahia Blanca, Argentina

fYear

2013

fDate

Feb. 27 2013-March 1 2013

Firstpage

1

Lastpage

4

Abstract

In the nanoscale technologies, the on-chip Power Management design strategy as a part of a System on Chip (SoC) is becoming extremely important. This work presents a fully integrated SIMO converter in a CMOS 65 nm technology. Since passive components are also integrated and their values should result relatively small the converter operates at a switching frequency of 200 MHz. This version counts with a step-up and a step-down outputs, but it can be easily extended to more otuputs. A suitable control strategy for high speed and nano-scale process together with system simulation results are discused.

Keywords

CMOS digital integrated circuits; DC-DC power convertors; integrated circuit design; system-on-chip; CMOS technology; SoC; frequency 200 MHz; fully-integrated SIMO DC-DC converter; fully-integrated single-inductor multiple-output DC-DC converter; high-speed nanoscale process; nanoscale technologies; on-chip power management design strategy; passive components; size 65 nm; step-up step-down outputs; system simulation; system-on-chip; CMOS integrated circuits; CMOS technology; Capacitors; Inductors; Switches; System-on-chip; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (LASCAS), 2013 IEEE Fourth Latin American Symposium on

Conference_Location

Cusco

Print_ISBN

978-1-4673-4897-3

Type

conf

DOI

10.1109/LASCAS.2013.6519071

Filename

6519071