Title :
DC and AC electrical characterization temperature dependence of Ag/Porous Silicon/p-Si/Al
Author :
Edward, S.O.O. ; Fonthal, R.F. ; Gilberto, M.B.P.
Author_Institution :
Adv. Mater. for Micro & Nanotechnol. Res. Group - IMAMNT, Univ. Autonoma de Occidente, Cali, Colombia
fDate :
Feb. 27 2013-March 1 2013
Abstract :
We present DC and AC electrical characterization and temperature dependence of Ag/Porous Silicon/p-Si/Al structures to examine conduction mechanisms. Porous Silicon (PS) layers were manufactured by electrochemical etching in p-type wafer silicon. The dependence of resistance vs. temperature was studied in a range between 240 and 320K for DC electrical analysis. On the other hand, the AC electrical measurements conductance and capacitance were performed from 101 to 107 Hz in a range of 0.7 to 1.7 V, at room temperature. For the mathematical model and equivalent circuit, the values and their respective simulations were found with the software of electronic characterization, CEALab®.
Keywords :
aluminium; capacitance; electrical conductivity; electrical resistivity; elemental semiconductors; equivalent circuits; etching; p-n heterojunctions; porous semiconductors; semiconductor-metal boundaries; silicon; silver; AC electrical characterization; Ag-Si-Si-Al; Ag-porous silicon-p-Si-Al structures; CEALab; DC electrical characterization; PS layers; capacitance; conductance; conduction mechanisms; electrochemical etching; electronic characterization; equivalent circuit; frequency 100 Hz to 10000000 Hz; mathematical model; p-type wafer silicon; resistance dependence; temperature 240 K to 320 K; temperature 293 K to 298 K; temperature dependence; voltage 0.7 V to 1.7 V; Capacitance; Mathematical model; Resistance; Silicon; Temperature dependence; Temperature measurement; Temperature sensors;
Conference_Titel :
Circuits and Systems (LASCAS), 2013 IEEE Fourth Latin American Symposium on
Conference_Location :
Cusco
Print_ISBN :
978-1-4673-4897-3
DOI :
10.1109/LASCAS.2013.6519078
