High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm

Author

Paschke, Katrin ; Wenzel, Hans ; Fiebig, C. ; Blume, Gunnar ; Bugge, F. ; Fricke, J. ; Erbert, Gotz

Author_Institution

Leibniz-Inst. fur Hochstfrequenztechnik, Ferdinand-Braun-Inst., Berlin, Germany

Volume

25

Issue

20

fYear

2013

fDate

Oct.15, 2013

Firstpage

1951

Lastpage

1954

Abstract

In this letter, we report on monolithic distributed Bragg reflector ridge waveguide diode lasers. The lasers feature highly strained InGaAs quantum wells and fifth order surface gratings for a stabilized emission wavelength ~1120 nm. Output powers up to 1 W and a maximum conversion efficiency of ~34% were achieved in a spatial and spectral single-mode. In a preliminary reliability test, at 0.4 W a lifetime of could be demonstrated. Therefore, the laser sources should allow for an efficient non-linear frequency doubling to 560 nm.

Keywords

diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; laser stability; quantum well lasers; reliability; ridge waveguides; waveguide lasers; InGaAs; fifth order surface gratings; high brightness DBR diode laser; monolithic distributed Bragg reflector laser; narrow bandwidth DBR Diode Laser; nonlinear frequency doubling; power 0.4 W; quantum well; reliability test; ridge waveguide diode laser; wavelength 1120 nm; Diode lasers; Distributed Bragg reflectors; Gratings; Laser beams; Power generation; Surface emitting lasers; 1120 nm; Diode laser; high brightness; high spectral radiance; semiconductor laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2273614

Filename

6570494