Title :
Scaling Limits of Rectangular and Trapezoidal Channel FinFETs
Author :
Mohseni, J. ; Meindl, J.D.
Author_Institution :
Electr. & Comput. Eng. Dept., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Here we present a complete analytical model that characterizes all the variations of multi-gate MOSFETs including the Tri-gate FinFET (Figure 1), all-around gate FinFET, Trapezoidal FinFET, Double-gate MOSFET, etc. Next we present a complete comparison between ideal rectangular FinFETs and trapezoidal FinFETs. Finally, for the first time, we present the ultimate limit for scaling of rectangular and trapezoidal FinFETs.
Keywords :
MOSFET; all-around gate FinFET; double-gate MOSFET; metal oxide semiconductor field effect transistors; multigate MOSFET; rectangular channel FinFET; trapezoidal FinFET; trapezoidal channel FinFET; trigate FinFET; Analytical models; FinFETs; Logic gates; Performance evaluation; Semiconductor device modeling; FINFET; Modeling; Multi-Gate MOSFET; Scaling Limit; Simulation; Trapezoidal FinFET;
Conference_Titel :
Green Technologies Conference, 2013 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4673-5191-1
DOI :
10.1109/GreenTech.2013.38
