Title :
Paralleling high-speed GaN power HEMTs for quadrupled power output
Author_Institution :
Transphorm Inc., Goleta, CA, USA
Abstract :
We present a design example to multiply output power from high-voltage GaN HEMTs in converter applications. A design process starting with a robust unit-cell design, employing equal-length transmission-line gate drives and short drain terminations successfully doubled and quadrupled output power with little efficiency degradation. A 4-kW 220V-400V boost converter at 100-kHz was demonstrated using 4 GaN HEMTs achieving >99% efficiency from 15% to 90% load.
Keywords :
high electron mobility transistors; GaN; boost converter; converter application; design process; efficiency degradation; equal length transmission line gate; high speed power HEMT; quadrupled power output; unit cell design;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-4673-4354-1
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2013.6520210
