DocumentCode :
601526
Title :
7.5 kV 4H-SiC GTO´s for power conversion
Author :
Fursin, Leonid ; Hostetler, John ; Li, Xueqing ; Fox, Matthew ; Alexandrov, Petre ; Hoffmann, Frank ; Holveck, Mark
Author_Institution :
United Silicon Carbide, Inc., 7 Deer Park Drive, Suite E, Monmouth Junction, NJ 08852, USA
fYear :
2013
fDate :
17-21 March 2013
Firstpage :
222
Lastpage :
225
Abstract :
There is a growing demand for medium voltage, 6.5 – 24 kV, switches capable of operating at more than 15 kHz frequencies. The range of potential applications includes grid-tied solar inverters and pulsed-power applications, where the conventional silicon thyristor technology is plagued with slow switching speeds at medium blocking voltage requirements. In this paper we present the design and characterization of 7.5 kV 4H-SiC Gate-Turn-Off thyristors (GTO´s) with multiple floating guard-ring edge termination, and present GTO switching performance at 10 kHz in an AC-link™ [1] inverter.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location :
Long Beach, CA, USA
ISSN :
1048-2334
Print_ISBN :
978-1-4673-4354-1
Electronic_ISBN :
1048-2334
Type :
conf
DOI :
10.1109/APEC.2013.6520212
Filename :
6520212
Link To Document :
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