Title :
Accurate design of high-performance synchronous buck DC-DC power converters
Author_Institution :
Energy Syst. Div., Argonne Nat. Lab., Argonne, IL, USA
Abstract :
Accurate power loss calculations are presented for a synchronous buck DC-DC power converter based on simple physics-based circuit models for the switch and inductor. The converter design is shown to be optimized for different die sizes of the high-side and low-side power switches; this design feature becomes important at increased switching frequencies. It is further shown that conventional power loss formulations are in error as they do not accurately calculate the switching power losses. A new figure-of-merit (FOM) is proposed to assess the performance of emerging high-performance power semiconductor switch technologies, especially for low-voltage point-of-load (POL) DC-DC power converters that utilize scaled silicon power MOSFETs and emerging Gallium Nitride (GaN) power transistors.
Keywords :
DC-DC power convertors; III-V semiconductors; gallium compounds; power MOSFET; power semiconductor switches; silicon; wide band gap semiconductors; FOM; GaN; converter design; figure-of-merit; gallium nitride power transistors; high-performance power semiconductor switch technologies; high-performance synchronous buck DC-DC power converters; high-side power switches; inductor; low-side power switches; low-voltage POL DC-DC power converters; low-voltage point-of-load DC-DC power converters; physics-based circuit models; power loss calculations; power loss formulations; silicon power MOSFET; switch;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-4673-4354-1
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2013.6520246