Title :
SiC vertical JFET pure diode-less inverter leg
Author :
Ouaida, Remy ; Fonteneau, X. ; Dubois, Fabien ; Bergogne, Dominique ; Morel, Florent ; Morel, Herve ; Oge, Sebastien
Author_Institution :
Lab. Ampere, Univ. de Lyon - INSA de Lyon, Villeurbanne, France
Abstract :
The aim of this paper is to investigate the ability of a vertical structure JFET to operate in an inverter leg without any internal or external diode. The JFET is characterized to show the reverse conduction capability while the gate-to-source voltage is lower than the threshold voltage. An inverter leg is tested at 540V/5A and 50 kHz. A specific test board is implemented to assess a safe operation over a period of time.
Keywords :
invertors; junction gate field effect transistors; silicon compounds; SiC; current 5 A; diode-less inverter leg; frequency 50 kHz; gate-to-source voltage; reverse conduction; threshold voltage; vertical JFET; voltage 540 V; Diode Less; Inverter Leg; Silicon Carbide; Vertical JFET;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-4673-4354-1
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2013.6520258
