Title :
100 MHz, 85% efficient integrated AlGaAs/GaAs supply modulator for RF power amplifier modules
Author :
Han Peng ; Pala, Vipindas ; Chow, T.P. ; Hella, Mona M.
Author_Institution :
ECSE Dept., Rensselaer Polytech. Inst., Niskayuna, NY, USA
Abstract :
A 100 MHz DC-DC converter for RF power amplifier modules employing polar modulation is presented. A resonant low side gate driver and phase shedding/segmentation in the output stage are used for light load efficiency improvement. The proposed two-phases four-segments flip chip DC-DC converter is implemented in 0.5 μm AlGaAs/GaAs p-HEMT technology and occupies 2.5×2 mm2 for the two segments. An efficiency improvement of 5% is achieved at 4.5 V to 1 V conversion using the resonant low side gate driver. The peak efficiency at 4.5 V/3.3 V and 2 A output current is 85% with the peak value maintained as the load current changes from 0.2 A to 2.8 A under phase shedding/segmentation.
Keywords :
DC-DC power convertors; high electron mobility transistors; modulation; power amplifiers; AlGaAs-GaAs; DC-DC converter; RF power amplifier modules; current 0.2 A to 2.8 A; frequency 100 MHz; light load efficiency improvement; p-HEMT technology; phase segmentation; phase shedding; polar modulation; resonant low side gate driver; supply modulator; two-phases four-segments flip chip DC-DC converter; voltage 4.5 V to 1 V;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-4673-4354-1
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2013.6520282
