DocumentCode :
601597
Title :
Advantages of paralleling inductors-on-silicon in high frequency power converters
Author :
Feeney, Ciaran ; Duffy, Maeve ; Ningning Wang ; O´Mathuna, Cian
Author_Institution :
Power Electron. Res. Centre, Nat. Univ. of Ireland, Galway, Ireland
fYear :
2013
fDate :
17-21 March 2013
Firstpage :
686
Lastpage :
691
Abstract :
In general power supplies are moving towards higher switching frequencies to reduce the size of passive components; the ultimate goal is to facilitate the integration of active and passive components on a single silicon chip providing a Power Supply on Chip (PSoC). The purpose of this work is to show that distributing inductors-on-silicon in parallel can increase the output current and reduce losses while also maintaining the same overall footprint area and the same effective inductance as a single micro-inductor. The performance of distributed micro-inductors is compared in a range of parallel micro-inductor configurations to show which configuration provides the best overall performance in terms of circuit size, conversion efficiency and power handling. For that purpose, detailed analysis of the performance of all power components (inductors and MOSFETs) is carried out.
Keywords :
elemental semiconductors; inductors; losses; passive networks; power MOSFET; power supply circuits; silicon; switching convertors; MOSFET; PSoC; Si; active components; high frequency power converter; loss; paralleling inductors-on-silicon; passive component; power handling; power supply on chip; single distributed microinductor configuration; size reduction; switching frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE
Conference_Location :
Long Beach, CA
ISSN :
1048-2334
Print_ISBN :
978-1-4673-4354-1
Electronic_ISBN :
1048-2334
Type :
conf
DOI :
10.1109/APEC.2013.6520284
Filename :
6520284
Link To Document :
بازگشت