Through-silicon via technology for three-dimensional integrated circuit manufacturing

Author

Civale, Y. ; Redolfi, A. ; Jaenen, Patrick ; Kostermans, M. ; Van Besien, E. ; Mertens, Sofie ; Witters, T. ; Jourdan, Nicolas ; Armini, S. ; El-Mekki, Z. ; Vandersmissen, Kevin ; Philipsen, Harold ; Verdonck, Patrick ; Heylen, Nancy ; Nolmans, P. ; Yunlo

Author_Institution

imec, Leuven, Belgium

fYear

2012

fDate

6-8 Nov. 2012

Firstpage

1

Lastpage

5

Abstract

Higher performance, higher operation speed and volume shrinkage require high 3D TSV interconnect densities. This work focuses on a via-middle 3D process flow, which implies processing of the 3D-TSV after the front-end-of-line (FEOL) and before the back-end-of-line (BEOL) interconnect process. A description of the imec 300 mm TSV platform is given, and challenges towards a reliable process integration of high density high aspect-ratio 3D interconnections are also discussed in details.

Keywords

integrated circuit interconnections; integrated circuit manufacture; integrated circuit reliability; three-dimensional integrated circuits; 3D TSV interconnect density; BEOL; FEOL; back-end-of-line; front-end-of-line; reliability; size 300 mm; three-dimensional integrated circuit manufacturing; through-silicon via technology; via-middle 3D process flow;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium (IEMT), 2012 35th IEEE/CPMT International

Conference_Location

Ipoh

ISSN

1089-8190

Print_ISBN

978-1-4673-4384-8

Electronic_ISBN

1089-8190

Type

conf

DOI

10.1109/IEMT.2012.6521827

Filename

6521827