Title :
Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices With Poly-Si Channel
Author :
Baojun Tang ; Weidong Zhang ; Toledano-Luque, Maria ; Jian Fu Zhang ; Degraeve, Robin ; Zhigang Ji ; Arreghini, Antonio ; Van den bosch, Geert ; Van Houdt, Jan
Author_Institution :
Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
Abstract :
Poly-Si (p-Si) channel used in 3-D Flash memory devices is the main source of degraded performance, such as the high interface state density. Charge pumping (CP) signals in the 3-D nanoscale vertical device with p-Si channel are analyzed in this paper using the variable amplitude CP technique. For the first time, it has been demonstrated experimentally that the broad CP edge is due to the threshold voltage variation in the p-Si channel caused by both the trapping in interface states and the source/drain p-n junction diffusion, and their impacts can be separately evaluated. Hot carrier stress in the tunneling FET operation modes and statistical analysis are used to provide supporting evidence.
Keywords :
elemental semiconductors; field effect transistors; flash memories; interface states; nanoelectronics; p-n junctions; silicon; statistical analysis; three-dimensional integrated circuits; tunnel transistors; 3D flash memory devices; 3D nanoscale vertical device; CP signals; Si; charge pumping signals; high interface state density; hot carrier stress; polysilicon channel; source-drain p-n junction diffusion; statistical analysis; threshold voltage variation; tunneling FET operation modes; variable amplitude CP technique; Charge carrier processes; Doping; Interface states; Junctions; Stress; Tunneling; 3-D; charge pumping (CP); doping profile; interface states; poly silicon (p-Si) channel; statistical variations; tunneling FET (TFET); tunneling FET (TFET).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2313038
