A 245 GHz, 2.6mW/pixel Antenna-less CMOS imager with 0.7fW/√Hz NEP and 3.5m backscattered range

Author

Tang, Adrian J. ; Hao Wu ; Chang, Mau-Chung Frank

fYear

2012

fDate

12-14 Nov. 2012

Firstpage

261

Lastpage

264

Abstract

We present a novel Antenna-less Regenerative Receiver (ARR) with subfW/√(Hz) noise equivalent power (NEP) and 10 GV/W responsivity for reflective (Stand-off) mode imaging applications. The proposed ARR eliminates previous needs of a separated antenna and an injection amplifier from the traditional SRR (Super Regenerative Receiver), and uses its existing passive resonance tank to capture backscattered radiation from the targeted object. As a result, the ARR can capture reflective images of plastic replica weapons at stand-off distances up to 3.5m with 30° off-incidence angle. Operating at 245 GHz, the ARR consumes only 0.036 mm² of silicon area and 2.6 mW/pixel of power in 40nm CMOS technology.

Keywords

CMOS integrated circuits; elemental semiconductors; field effect MIMIC; millimetre wave amplifiers; silicon; ARR; CMOS technology; NEP; SRR; Si; antenna-less CMOS imager; antenna-less regenerative receiver; backscattered range; frequency 245 GHz; injection amplifier; noise equivalent power; passive resonance tank; plastic replica weapons; reflective images; reflective stand-off mode imaging; separated antenna; silicon area; size 40 nm; super regenerative receiver;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Circuits Conference (A-SSCC), 2012 IEEE Asian

Conference_Location

Kobe

Type

conf

DOI

10.1109/IPEC.2012.6522675

Filename

6522675