III–V heterostructure-on-insulator for strain studies in n-InGaAs channels

Strain effects on the effective channel mobility of InGaAs pseudo (Ψ) n-MOSFETs are investigated using the mechanical beam bending technique. For this purpose III-V heterostructures grown on InP are transferred to Si by direct wafer bonding. An electron mobility increase up to 70% can be achieved under tensile strain. By comparison with simulations of InGaAs band structure parameters under strain, we suggest that this mobility enhancement is due to an increase of the sheet carrier density rather than to a decrease of the effective mass.