III–V heterostructure-on-insulator for strain studies in n-InGaAs channels

Author

Weigele, P. ; Czornomaz, L. ; Caimi, D. ; Daix, N. ; Sousa, M. ; Fompeyrine, J. ; Rossel, C.

Author_Institution

IBM Res. - Zurich, Zurich, Switzerland

fYear

2013

fDate

19-21 March 2013

Firstpage

45

Lastpage

48

Abstract

Strain effects on the effective channel mobility of InGaAs pseudo (Ψ) n-MOSFETs are investigated using the mechanical beam bending technique. For this purpose III-V heterostructures grown on InP are transferred to Si by direct wafer bonding. An electron mobility increase up to 70% can be achieved under tensile strain. By comparison with simulations of InGaAs band structure parameters under strain, we suggest that this mobility enhancement is due to an increase of the sheet carrier density rather than to a decrease of the effective mass.

Keywords

III-V semiconductors; MOSFET; band structure; bending; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; wafer bonding; III -V heterostructure-an-insulator; InGaAs; channel mobility; direct wafer bonding; effective mass; electron mobility; mechanical beam bending technique; mobility enhancement; n-MOSFET; sheet carrier density; tensile strain effect study; MOSFET circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523487

Filename

6523487