Title :
Model for investigation of Ion/Ioff ratios in short-channel junctionless double gate MOSFETs
Author :
Holtij, Thomas ; Schwarz, Mathias ; Graef, Michael ; Hain, Fabian ; Kloes, Alexander ; Iniguez, B.
Author_Institution :
Competence Center for Nanotechnol. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany
Abstract :
We developed a 2D analytical model for junctionless double gate (DG) MOSFETs valid for all regions of device operation. The 2D solution for the potential enables us to predict electrical parameters, such as threshold voltage and subthreshold slope, as well as current and Ion/Ioff ratios fast and accurate. From the results for the ratios we define an optimum point of device operation for different doping concentrations. The Poisson equation and the conformal mapping technique by Schwarz-Christoffel are used to build the model. A comparison of our 2D physics-based model has been done versus 2D TCAD Sentaurus simulation data.
Keywords :
MOSFET; semiconductor device models; semiconductor doping; stochastic processes; 2D TCAD Sentaurus simulation data; 2D analytical model; 2D physics-based model; Poisson equation; Schwarz-Christoffel; doping concentrations; junctionless DG MOSFET; short-channel junctionless double gate MOSFET; Equations; Indexes; MOS devices; Mathematical model; Physics; Semiconductor device modeling; Transistors; Analytical modeling; Ion/Ioff ratio; conformal mapping; junctionless DG MOSFET; potential solution;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523497
