DocumentCode :
602822
Title :
Gate-all-around Si nanowire array tunnelling FETs with high on-current of 75 µA/µm @ VDD=1.1V
Author :
Knoll, Lars ; Richter, Simon ; Nichau, A. ; Schafer, Andreas ; Bourdelle, Konstantin K. ; Zhao, Q.T. ; Mantl, Siegfried
Author_Institution :
JARA-FIT, Forschungszentrum Julich, Julich, Germany
fYear :
2013
fDate :
19-21 March 2013
Firstpage :
97
Lastpage :
100
Abstract :
Gate-all-around Si nanowire array p-type tunneling field effect transistors (GAA NW p-TFETs) have been fabricated on thin SOI. High on-current of 75 μA/μm at VD=VG=1.1V (=VDD) was observed. Asymmetric junctions were formed to suppress ambipolar switching typical for all silicon TFETs. Nickel aluminum silicide NiAl0.2Si1.8 was used to create high quality single crystalline metal source/drain contacts with matched lattice parameter to the silicon substrate. Implantation into silicide (IIS) method created the n++-junctions after outdiffusion of the dopants with a low temperature thermal anneal at 500°C in forming gas (FG). TCAD simulations confirm TFET operation and qualitatively demonstrate the suppression of ambipolarity by optimization of the drain contact.
Keywords :
aluminium compounds; annealing; field effect transistors; nanowires; nickel compounds; silicon-on-insulator; tunnel transistors; FG; GAA NW p-TFET; NiAl0.2Si1.8; TCAD simulations; ambipolar switching suppression; asymmetric junctions; forming gas; gate-all-around nanowire array p-type tunneling field effect transistors; implantation into silicide method; lIS method; low temperature thermal anneal; matched lattice parameter; single crystalline metal source-drain contacts; temperature 500 degC; thin SOl; voltage 1.1 V; Annealing; Europe; Logic gates; Silicon; Switches; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
Type :
conf
DOI :
10.1109/ULIS.2013.6523500
Filename :
6523500
Link To Document :
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