Title :
Modelling of reliability of nanoscale MOSFETs within the discrete charge trapping paradigm
Author :
Adamu-Lema, F. ; Amoroso, Salvatore Maria ; Gerrer, Louis ; Asenov, Asen
Author_Institution :
Univ. of Glasgow, Glasgow, UK
Abstract :
A computational simulation study of oxide reliability degradation considering bias temperature instabilities and random telegraph noise in nano-scale transistors is presented. The interplay between statistical variability, induced by random dopant fluctuations, and reliability is discussed in details, within the framework of a discrete charge trapping paradigm. The stochastic behaviour of the key reliability figures of merit is analyzed by means of both static and dynamic oxide degradation simulations.
Keywords :
MOSFET; semiconductor device models; semiconductor device reliability; statistical analysis; stochastic processes; computational simulation study; discrete charge trapping paradigm; dynamic oxide degradation simulations; nanoscale MOSFET reliability modelling; nanoscale transistors; oxide reliability degradation; random dopant fluctuations; random telegraph noise; static oxide degradation simulations; statistical variability; stochastic behaviour; temperature instabilities; Analytical models; CMOS integrated circuits; Computational modeling; Logic gates; Reliability; Semiconductor device modeling; Stochastic processes; BTI; CMOS; Charge-trapping; RTN; TAT; degradation; device simulation; reliability; variability;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523506
