Title :
Thermally grown GeO2 on epitaxial Ge on Si(001) substrate
Author :
Casteleiro, C. ; Halpin, J.E. ; Shah, V.A. ; Myronov, M. ; Leadley, D.R.
Author_Institution :
Dept. of Phys., Univ. of Warwick, Coventry, UK
Abstract :
We show good quality (GeO2) layer grown on epitaxial germanium on a Si substrate. The oxidation was done at two temperatures, 450°C and 475°C. The oxidation at 475°C was done for 30min and 60min. It was found that the layers growth at 475°C show higher quality.
Keywords :
epitaxial growth; epitaxial layers; germanium compounds; oxidation; passivation; transmission electron microscopy; Ge; GeO2; Si; TEM; epilayers; epitaxial Ge substrate; epitaxial Si(001) substrate; epitaxial germanium substrate; oxidation; surface passivation; temperature 450 degC; temperature 475 degC; time 30 min; time 60 min; Annealing; Epitaxial growth; Hafnium; Lead; Logic gates; Performance evaluation; Silicon; Germanium oxide; Oxidation; Surface passivation; Thermal growth;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523510
