Title :
Qualitative and quantitative differences between non-crystalline and nano-crystalline oxides in device technologies
Author :
Lucovsky, Gerry ; Jinwoo Kim
Author_Institution :
Dept. of Phys., North Carolina State Univ., Raleigh, NC, USA
Abstract :
This paper presents (i) spectroscopic studies of intrinsic vacated O-site defects in non-crystallin(nc-) SiO2, GeO2 and nano-crystalline HfO2 and TiO2, and (ii) proof of concept spectroscopic studies. These indicate electronic structure that favors nc-SiO2 and GeO2 for gate stacks in CMOS devices that push the ultimate limits of thickness scaling reductions, and interfacial engineering. The properties of elemental and multi-constituent TM oxides are determined by a qualitatively and quantitaively different band edge and vacated O-atom site structure that makes them viable candidates for memory and switching devices.
Keywords :
CMOS integrated circuits; electronic structure; germanium compounds; hafnium compounds; nanostructured materials; silicon compounds; titanium compounds; CMOS devices; Ge; HfO2; SiO2; TiO2; band edge; concept spectroscopic study; electronic structure; gate stacks; interfacial engineering; intrinsic vacated O-site defects; memory devices; nanocrystalline oxides; noncrystalline oxides; switching devices; thickness scaling reductions; vacated O-atom site structure; Atomic measurements; CMOS integrated circuits; Hafnium compounds; Logic gates; HfO2; Magneli phase alloys; TiO2; TiO2-HfO2 alloys; X-ray absorption and photo emission spectroscopies; ligand feild splitting; memory and switching devices; n-c SiO2; nc-GeO2; remote plasma processing;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523511
