DocumentCode :
602835
Title :
Exploring the field-effect control of breakdown paths in lateral W/HfO2/W structures
Author :
Saura, X. ; Lian, Xiang ; Jimenez, Daniel ; Miranda, E. ; Borrise, X. ; Rafi, J.M. ; Campabadal, F. ; Sune, Jordi
Author_Institution :
Dept. d´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain
fYear :
2013
fDate :
19-21 March 2013
Firstpage :
177
Lastpage :
180
Abstract :
Metal nanogap test structures are used to demonstrate the field-effect control of the conduction through dielectric breakdown paths in W/HfO2/W structures. Variations of the size of the conducting filament in the nanogap are demonstrated by current compliance limited voltage ramps and by a partial reset method.
Keywords :
MIS structures; conductors (electric); electric breakdown; hafnium compounds; nanocontacts; tungsten; MOS structure; W-HfO2-W; conducting filament; conduction; dielectric breakdown path; field-effect control; metal nanogap test structure; nanocontact; partial reset method; voltage ramp; Atmospheric measurements; Particle measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
Type :
conf
DOI :
10.1109/ULIS.2013.6523513
Filename :
6523513
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=602835
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