Title :
Simulation methodology for 2D random network of CNTs field-effect transistors
Author :
Min-Kyu Joo ; Mouis, M. ; Gyu-Tae Kim ; Un Jeong Kim ; Ghibaudo, Gerard
Author_Institution :
IMEP-LAHC, Grenoble INP-MINATEC, Grenoble, France
Abstract :
Two-dimensional (2D) random networks of carbon nanotubes (RN-CNTs) were simulated with respect to various geometry factors and compared with experimental results. To determine the effective current-conducting pathway(s) in such complex RN-CNTs, we developed a methodology to find the optimal percolation paths with account for the conduction length (ld) of each CNT segment involved, for properties of the junction between CNTs and for series resistance (Rsd) at contacts. Moreover, to investigate linear and non-linear operation of RN-CNT FETs, SPICE circuit simulation was employed.
Keywords :
carbon nanotube field effect transistors; geometry; nanocontacts; percolation; 2D random network; C; CNT field-effect transistor; FET; SPICE circuit simulation; carbon nanotube; conduction length; contact; current-conducting pathway; geometry; optimal percolation path; series resistance; simulation methodology; two-dimensional random network; Biological system modeling; Educational institutions; Field effect transistors; Gold; Immune system; Logic gates; Reliability; Carbon nanotube (CNT); SPICE simulation; percolation theory; sensor applications;
Conference_Titel :
Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on
Conference_Location :
Coventry
Print_ISBN :
978-1-4673-4800-3
Electronic_ISBN :
978-1-4673-4801-0
DOI :
10.1109/ULIS.2013.6523518
