Monte carlo simulation of the effect of interface roughness in Implant-Free Quantum-Well MOSFETs

Author

Towie, E.A. ; Riddet, C. ; Asenov, Asen

Author_Institution

Device Modelling Group, Univ. of Glasgow, Glasgow, UK

fYear

2013

fDate

19-21 March 2013

Firstpage

113

Lastpage

116

Abstract

In this paper we use numerical simulations to evaluate the impact of interface roughness scattering on III-V n-type and Ge p-type Implant-Free Quantum-Well (IFQW) MOSFETs suitable for the 10nm CMOS technology generation. We make use of Monte Carlo transport simulations to capture the non-equilibrium effects and evaluate the impact that the spacer between gate and source/drain regions and interface roughness scattering have on IFQW performance. We show that the quality of interface between the gate stack and channel and the width of the spacer both impact strongly on device performance.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; Monte Carlo methods; elemental semiconductors; germanium; interface roughness; semiconductor quantum wells; CMOS technology generation; Ge; Ge p-type implant-free quantum-well MOSFET; IFQW MOSFET; IFQW performance; III-V n-type implant-free quantum-well MOSFET; InGaAs; Monte Carlo transport simulations; Monte carlo simulation; gate stack; interface roughness scattering; nonequilibrium effects; numerical simulations; size 10 nm; source/drain regions; CMOS integrated circuits; CMOS technology; Indium gallium arsenide; Logic gates; MOSFET; Performance evaluation; Scattering; Ge; III–V; InGaAs; metal-oxide-semiconductor FETs; single gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523526

Filename

6523526