Pure Ge quantum well with high hole mobility

Author

Hassan, A.H.A. ; Mironov, O.A. ; Feher, A. ; Cizmar, E. ; Gabani, S. ; Morris, R.J.H. ; Dobbie, A. ; Shah, V.A. ; Myronov, M. ; Berkutov, I.B. ; Andrievskii, V.V. ; Leadley, D.R.

Author_Institution

Dept. of Phys., Univ. of Warwick, Coventry, UK

fYear

2013

fDate

19-21 March 2013

Firstpage

117

Lastpage

120

Abstract

We present magneto-transport properties of the two dimensional hole gas (2DHG) in fully strained Ge quantum wells grown on S_i0.2Ge_0.8/Si (100) substrates. Comparison is made between heterostructures that are modulation doped in both normal and inverted configurations. Using Shubnikov de Haas oscillations at temperatures down to 90 mK (inverted structure) and to 1.5K (normal structure), an extremely high hole mobility (0.51-1.34) × 10⁶ cm²/Vs has been observed, along with the lowest value of effective mass (0.063-0.070) m₀ to date. The 2DHG is confirmed to be in a pure Ge channel, with low background impurity scattering that improves the 2DHG transport.

Keywords

Shubnikov-de Haas effect; chemical vapour deposition; elemental semiconductors; germanium; hole mobility; oscillations; semiconductor growth; semiconductor quantum wells; two-dimensional hole gas; 2DHG transport; Ge; Shubnikov de Haas oscillations; Si_0.2Ge_0.8-Si; Si_0.2Ge_0.8-Si (100) substrates; effective mass; heterostructures; hole mobility; impurity scattering; magneto-transport properties; quantum well; two dimensional hole gas; Lead; Scattering; Silicon germanium; 2DHG; Ge quantum well; Ge/SiGe; hole mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on

Conference_Location

Coventry

Print_ISBN

978-1-4673-4800-3

Electronic_ISBN

978-1-4673-4801-0

Type

conf

DOI

10.1109/ULIS.2013.6523527

Filename

6523527