• DocumentCode
    602881
  • Title

    Impacts of NBTI and PBTI effects on ternary CAM

  • Author

    Yen-Han Lee ; Ing-Chao Lin ; Sheng-Wei Wang

  • Author_Institution
    Dept. of Comput. Sci. & Inf. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • fYear
    2013
  • fDate
    4-6 March 2013
  • Firstpage
    38
  • Lastpage
    45
  • Abstract
    Ternary content addressable memory (TCAM), which can store 0, 1 and X in its cells, is widely used to store routing tables in network routers. Meanwhile, NBTI (Negative Bias Temperature Instability) and PBTI (Positive Biased Temperature Instability), which increase Vth and degrade transistor switching speed, have become major reliability challenges. In this paper, we propose a novel TCAM architecture to reduce BTI degradation using a bit-flipping technique. This novel TCAM architecture ensures the correctness of read, write and search operations. We also analyze the signal probabilities of TCAM cells, and demonstrate that the bit-flipping technique can balance signal probabilities. By using the bit-flipping technique, 76.40% of the data cells under investigation were found to have signal probabilities close to 50%, which is 62.80% higher than the original architecture. In addition, 92.60% of the mask cells had signal probabilities close to 50%, which is 91.20% higher than the original architecture. When considering the overhead of the bit-flipping technique, the best flipping frequency is once a day.
  • Keywords
    content-addressable storage; integrated circuit reliability; negative bias temperature instability; network routing; probability; transistor circuits; BTI degradation; NBTI; PBTI; TCAM architecture; TCAM cell; bit-flipping technique; data cells; flipping frequency; mask cell; negative bias temperature instability; network router; positive biased temperature instability; read operation; reliability; routing table; search operation; signal probability; ternary CAM; ternary content addressable memory; transistor switching speed; write operation; Computer architecture; Degradation; Delays; MOSFET; Routing; Stress; Bit-flipping; NBTI; PBTI; Reliability; Ternary CAM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2013 14th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1948-3287
  • Print_ISBN
    978-1-4673-4951-2
  • Type

    conf

  • DOI
    10.1109/ISQED.2013.6523588
  • Filename
    6523588