Title :
Flexible data allocation for scratch-pad memories to reduce NBTI effects
Author :
Papagiannopoulou, D. ; Prasertsom, P. ; Bahar, Iris
Author_Institution :
Electr. Eng. Dept., Brown Univ., Providence, RI, USA
Abstract :
Negative Bias Temperature Instability (NBTI) is a major reliability issue in nanoscale VLSI systems. Previous work has shown how the exploitation of conventional optimization techniques can reduce the NBTI-induced aging in cache memories. Other works have proposed approaches that incorporate software directed data allocation strategies to partially recover from NBTI-induced aging in Scratchpad Memories (SPM). In this paper, we extend the existing software approach in order to enhance the memory allocation flexibility and make it more appropriate for real embedded applications. Simulation results demonstrate how our proposed data allocation strategies can help mitigate the NBTI-induced aging effects, as well as reduce the leakage energy consumption on scratch-pad memories.
Keywords :
SRAM chips; VLSI; cache storage; energy consumption; negative bias temperature instability; semiconductor device reliability; NBTI effects; NBTI-induced aging effects; SPM; cache memory; conventional optimization techniques; flexible data allocation; leakage energy consumption; memory allocation flexibility; nanoscale VLSI systems; negative bias temperature instability; real embedded applications; reliability issue; scratch-pad memory; scratchpad memory; software directed data allocation strategy; Aging; Degradation; MOSFET; Memory management; Resource management; Software; Stress; Aging; Data Allocation; Energy Efficiency; NBTI; SRAM; Scratchpad memory;
Conference_Titel :
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4673-4951-2
DOI :
10.1109/ISQED.2013.6523591