DocumentCode :
602888
Title :
A system-level solution for managing spatial temperature gradients in thinned 3D ICs
Author :
Annamalai, A. ; Kumar, Ravindra ; Vijayakumar, A. ; Kundu, Sandipan
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Amherst, Amherst, MA, USA
fYear :
2013
fDate :
4-6 March 2013
Firstpage :
88
Lastpage :
95
Abstract :
As conventional CMOS technology is approaching scaling limits, the shift in trend towards stacked 3D Integrated Circuits (3D IC) is gaining more importance. 3D ICs offer reduced power dissipation, higher integration density, heterogeneous stacking and reduced interconnect delays. In a 3D IC stack, all but the bottom tier are thinned down to enable through-silicon vias (TSV). However, the thinning of the substrate increases the lateral thermal resistance resulting in higher intra-layer temperature gradients potentially leading to performance degradation and even functional errors. In this work, we study the effect of thinning the substrate on temperature profile of various tiers in 3D ICs. Our simulation results show that the intra-layer temperature gradient can be as high as 57°C. Often, the conventional static solutions lead to highly inefficient design. To this end, we present a system-level situation-aware integrated scheme that performs opportunistic thread migration and dynamic voltage and frequency scaling (DVFS) to effectively manage thermal violations while increasing the system throughput relative to stand-alone schemes.
Keywords :
integrated circuit interconnections; thermal management (packaging); thermal resistance; three-dimensional integrated circuits; 3D IC stack; CMOS technology; DVFS; TSV; dynamic voltage scaling; frequency scaling; heterogeneous stacking; integration density; interconnect delay; intralayer temperature gradient; lateral thermal resistance; opportunistic thread migration; power dissipation; spatial temperature gradient management; stacked 3D integrated circuit; substrate the; substrate thinning; system-level situation-aware integrated scheme; temperature profile; thermal violation management; thinned 3D IC; through-silicon vias; Integrated circuits; Registers; Substrates; Switches; Thermal analysis; 3D IC; dynamic Thermal Management; dynamic voltage and frequency scaling (DVFS); spatial gradient; thread migration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1948-3287
Print_ISBN :
978-1-4673-4951-2
Type :
conf
DOI :
10.1109/ISQED.2013.6523595
Filename :
6523595
Link To Document :
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