• DocumentCode
    602888
  • Title

    A system-level solution for managing spatial temperature gradients in thinned 3D ICs

  • Author

    Annamalai, A. ; Kumar, Ravindra ; Vijayakumar, A. ; Kundu, Sandipan

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Amherst, Amherst, MA, USA
  • fYear
    2013
  • fDate
    4-6 March 2013
  • Firstpage
    88
  • Lastpage
    95
  • Abstract
    As conventional CMOS technology is approaching scaling limits, the shift in trend towards stacked 3D Integrated Circuits (3D IC) is gaining more importance. 3D ICs offer reduced power dissipation, higher integration density, heterogeneous stacking and reduced interconnect delays. In a 3D IC stack, all but the bottom tier are thinned down to enable through-silicon vias (TSV). However, the thinning of the substrate increases the lateral thermal resistance resulting in higher intra-layer temperature gradients potentially leading to performance degradation and even functional errors. In this work, we study the effect of thinning the substrate on temperature profile of various tiers in 3D ICs. Our simulation results show that the intra-layer temperature gradient can be as high as 57°C. Often, the conventional static solutions lead to highly inefficient design. To this end, we present a system-level situation-aware integrated scheme that performs opportunistic thread migration and dynamic voltage and frequency scaling (DVFS) to effectively manage thermal violations while increasing the system throughput relative to stand-alone schemes.
  • Keywords
    integrated circuit interconnections; thermal management (packaging); thermal resistance; three-dimensional integrated circuits; 3D IC stack; CMOS technology; DVFS; TSV; dynamic voltage scaling; frequency scaling; heterogeneous stacking; integration density; interconnect delay; intralayer temperature gradient; lateral thermal resistance; opportunistic thread migration; power dissipation; spatial temperature gradient management; stacked 3D integrated circuit; substrate the; substrate thinning; system-level situation-aware integrated scheme; temperature profile; thermal violation management; thinned 3D IC; through-silicon vias; Integrated circuits; Registers; Substrates; Switches; Thermal analysis; 3D IC; dynamic Thermal Management; dynamic voltage and frequency scaling (DVFS); spatial gradient; thread migration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2013 14th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1948-3287
  • Print_ISBN
    978-1-4673-4951-2
  • Type

    conf

  • DOI
    10.1109/ISQED.2013.6523595
  • Filename
    6523595