DocumentCode :
602925
Title :
Performance entitlement by exploiting transistor´s BTI recovery
Author :
Arasu, S. ; Nourani, M. ; Reddy, Veerababu ; Carulli, John M.
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
fYear :
2013
fDate :
4-6 March 2013
Firstpage :
341
Lastpage :
346
Abstract :
The inherent problem in signal probability (α) prediction has limited the scope of exploiting the transistor´s BTI recovery at circuit level. In this paper, we present a design-for-reliability (DFR) methodology for digital designs, BTI_Refresh, that instead of relying on predicting α, sets it to a known value (~0.5) such that the BTI stress effects are alleviated and a predicted recovery effect could be guaranteed at circuit level. The technique can be applied equally to both NBTI and PBTI. Experimental results using Cadence Relxpert on critical paths extracted from industry designs show that with a negligible power, area overhead, a significant improvement (50%) in the total degradation of critical path performance with respect to end-of-life models is achievable.
Keywords :
integrated circuit design; integrated circuit modelling; integrated circuit reliability; negative bias temperature instability; probability; transistor circuits; BTI stress effect; BTI_Refresh; Cadence Relxpert; DFR methodology; NBTI; PBTI; area overhead; circuit level; critical path performance; design-for-reliability; digital design; end-of-life model; negligible power; signal probability prediction; transistor BTI recovery; Clocks; Degradation; Integrated circuit modeling; Logic gates; Stress; Timing; Transistors; BTI Recovery; Bias Temperature Instability (BTI); Clock Gating; Design for Reliability Technique; Signal Probability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1948-3287
Print_ISBN :
978-1-4673-4951-2
Type :
conf
DOI :
10.1109/ISQED.2013.6523632
Filename :
6523632
Link To Document :
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