• DocumentCode
    602925
  • Title

    Performance entitlement by exploiting transistor´s BTI recovery

  • Author

    Arasu, S. ; Nourani, M. ; Reddy, Veerababu ; Carulli, John M.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
  • fYear
    2013
  • fDate
    4-6 March 2013
  • Firstpage
    341
  • Lastpage
    346
  • Abstract
    The inherent problem in signal probability (α) prediction has limited the scope of exploiting the transistor´s BTI recovery at circuit level. In this paper, we present a design-for-reliability (DFR) methodology for digital designs, BTI_Refresh, that instead of relying on predicting α, sets it to a known value (~0.5) such that the BTI stress effects are alleviated and a predicted recovery effect could be guaranteed at circuit level. The technique can be applied equally to both NBTI and PBTI. Experimental results using Cadence Relxpert on critical paths extracted from industry designs show that with a negligible power, area overhead, a significant improvement (50%) in the total degradation of critical path performance with respect to end-of-life models is achievable.
  • Keywords
    integrated circuit design; integrated circuit modelling; integrated circuit reliability; negative bias temperature instability; probability; transistor circuits; BTI stress effect; BTI_Refresh; Cadence Relxpert; DFR methodology; NBTI; PBTI; area overhead; circuit level; critical path performance; design-for-reliability; digital design; end-of-life model; negligible power; signal probability prediction; transistor BTI recovery; Clocks; Degradation; Integrated circuit modeling; Logic gates; Stress; Timing; Transistors; BTI Recovery; Bias Temperature Instability (BTI); Clock Gating; Design for Reliability Technique; Signal Probability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2013 14th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1948-3287
  • Print_ISBN
    978-1-4673-4951-2
  • Type

    conf

  • DOI
    10.1109/ISQED.2013.6523632
  • Filename
    6523632