DocumentCode
602964
Title
Wire delay variability in nanoscale technology and its impact on physical design
Author
Nassif, Sani R. ; Gi-Joon Nam ; Banerjee, Sean
Author_Institution
IBM Res., Austin, TX, USA
fYear
2013
fDate
4-6 March 2013
Firstpage
591
Lastpage
596
Abstract
Current technology scaling trends are changing the character of wire delay variability. The distribution of wire delay is asymmetric, with a long positive tail which can be as much as 2X longer than the negative tail. This is due to the geometry of these wires, where the aspect ratio is biased towards tall thin wire cross-sections, as well as manufacturing induced variations particularly from lithography. These trends are important for timing closure, whether done via corner-based or statistical analysis. In this paper, we explore these trends, demonstrate their impact in a modern 32nm CMOS design, and suggest ways in which this trend can be managed and reduced. Particularly, through physical synthesis optimization on industrial designs, we show how these trends/observations can be utilized to produce more reliable designs. As the interconnect scaling lags behind the device scaling, the importance of wire variability will grow further in the future technology nodes.
Keywords
CMOS integrated circuits; nanolithography; statistical analysis; CMOS design; corner-based analysis; interconnect scaling; lithography; nanoscale technology; physical design; physical synthesis optimization; statistical analysis; timing closure; wavelength 32 nm; wire cross-sections; wire delay variability; Delays; Integrated circuit interconnections; Market research; Metals; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1948-3287
Print_ISBN
978-1-4673-4951-2
Type
conf
DOI
10.1109/ISQED.2013.6523671
Filename
6523671
Link To Document