Title :
A 0.2nJ/sample 0.01mm2 ring oscillator based temperature sensor for on-chip thermal management
Author :
Testi, N. ; Yang Xu
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
Energy efficient and low area temperature sensors are critical for constantly monitoring the silicon temperature in high density integrated circuits. In this paper, a 0.2nJ/sample ring oscillator based temperature sensor is designed and fabricated in TSMC 65nm CMOS technology. The sensor achieves a maximum inaccuracy of ±3°C after 2-point calibration and a resolution of 0.3°C. Furthermore, a model is proposed to accurately predict the effect of the oscillator phase noise on the error of the sensor. The chip occupies only 0.01mm2.
Keywords :
CMOS integrated circuits; oscillators; phase noise; temperature measurement; temperature sensors; TSMC CMOS technology; energy efficiency; high density integrated circuits; low area temperature sensors; on-chip thermal management; oscillator phase noise; ring oscillator based temperature sensor; silicon temperature monitoring; size 65 nm; temperature 0.3 degC; two-point calibration; Radiation detectors; Ring oscillators; Temperature distribution; Temperature measurement; Temperature sensors; Transistors; Ring oscillator; TCO; error analysis; jitter; phase noise; temperature sensor;
Conference_Titel :
Quality Electronic Design (ISQED), 2013 14th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4673-4951-2
DOI :
10.1109/ISQED.2013.6523686
