DocumentCode :
603274
Title :
Performance Evaluation of Five Stage VCO Ring Oscillator with Reverse Substrate Bias and SAL Technique Using Nanoscale CMOS Technology
Author :
Shrivastava, Ashish ; Khandelwal, Sourabh ; Akashe, Shyam
Author_Institution :
ITM Univ., Gwalior, India
fYear :
2013
fDate :
6-7 April 2013
Firstpage :
337
Lastpage :
342
Abstract :
In the present work, improved designs for five-stage voltage controlled ring oscillators (VCO) with reverse body bias and SAL technique have been presented to improve the performance parameter. First VCO design with inverter based delay cell shows frequency variation [3.9-1.89] MHz with SAL technique and Second design with varying PMOS and NMOS substrate bias from [0.6-1.1] V shows frequency variation of [6.62-3.0] GHz. The proposed five stages VCO ring oscillator is implemented in 45nm cadence virtuoso environment provides high oscillation frequency (GHz) provide less delay (0.21psec), minimum phase noise (179.1dBc/Hz) and lower leakage power (1.23pw) with reverse substrate bias technique.
Keywords :
CMOS integrated circuits; delays; phase noise; voltage-controlled oscillators; NMOS substrate; PMOS substrate; SAL chnique; SAL technique; VCO design; VCO ring oscillator; cadence virtuoso environment; delay; fivestage voltage controlled ring oscillators; frequency 3.9 MHz to 1.89 MHz; frequency 6.62 GHz to 3 GHz; frequency variation; inverter based delay cell; lower leakage power; nanoscale CMOS technology; oscillation frequency; performance evaluation; performance parameter; phase noise; reverse body bias; reverse substrate; reverse substrate bias technique; voltage 0.6 V to 1.1 V; CMOS integrated circuits; Delays; Phase noise; Ring oscillators; Substrates; Voltage-controlled oscillators; Delay; Leakage Power; Oscillation frequency; Phase noise; SAL; VCO Ring oscillator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Computing and Communication Technologies (ACCT), 2013 Third International Conference on
Conference_Location :
Rohtak
ISSN :
2327-0632
Print_ISBN :
978-1-4673-5965-8
Type :
conf
DOI :
10.1109/ACCT.2013.78
Filename :
6524328
Link To Document :
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