Presence of Internal Field Emission Currents in GaAs Diodes

A forward and a reverse current bias study has been achieved in the design of GaAs diodes using the close space vapour deposition (CSVT) technique in order to find out the dominant current mechanisms. The diodes were characterized over a temperature range from 94 K to 293 K. The soundness of the dominant current in the range 1×10^-7 to 1×10^-2 A with an internal field emission current model of the form I=A·V_a·E·exp{-(4/3)·⌊(2m_T)^1/2/qħ⌋·(E_b^3/2/E)} has been demonstrated. These currents are the result of the presence of allocated states within the forbidden gap as proved by the model.