DocumentCode
603518
Title
Noise-Tolerant Model of a Ternary Inverter Based on Markov Random Field
Author
Tangim, G. ; Yanushkevich, S.N. ; Kasai, Shoji ; Shmerko, Vlad P.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Calgary, Calgary, AB, Canada
fYear
2013
fDate
22-24 May 2013
Firstpage
278
Lastpage
283
Abstract
A noise-tolerant model of a ternary inverter is proposed based on extension of Markov Random Field (MRF). Simulation results are reported to justify the noise immunity of this model using PSPICE and 16-nm Berkeley CMOS technology.
Keywords
CMOS integrated circuits; Markov processes; circuit simulation; integrated circuit modelling; integrated circuit noise; invertors; random noise; random processes; Berkeley CMOS technology; MRF; Markov random field; PSPICE technology; noise-immunity; noise-tolerant model; size 16 nm; ternary inverter; CMOS integrated circuits; Inverters; Logic gates; Probability distribution; Semiconductor device modeling; Signal to noise ratio; Markov random field model; noise-tolerance; ternary inverter;
fLanguage
English
Publisher
ieee
Conference_Titel
Multiple-Valued Logic (ISMVL), 2013 IEEE 43rd International Symposium on
Conference_Location
Toyama
ISSN
0195-623X
Print_ISBN
978-1-4673-6067-8
Electronic_ISBN
0195-623X
Type
conf
DOI
10.1109/ISMVL.2013.40
Filename
6524677
Link To Document