Memristor Drift Model based on conservation of mobile vacancies

Author

Rudra, M.R. ; Pieper, R.J.

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Tyler, Tyler, TX, USA

fYear

2013

fDate

11-11 March 2013

Firstpage

12

Lastpage

16

Abstract

A significant percentage of the analysis applied to memristors is based on the Linear Drift Model. In the Linear Drift Model the resistance of the doped region increases in direct proportion to the width of the doped region. It is shown that this is not consistent with the physical conservation of the mobile vacancies. A circuit model is proposed which is consistent with the conservation of the mobile vacancies and takes into account a high constant intrinsic resistivity indicative of the memristor “off state”. A numerical analysis (NA) scheme is tested and compared with reported Hewlett Packard memristor data and with the theoretical solution for the Linear Drift Model.

Keywords

electrical resistivity; memristors; numerical analysis; Hewlett Packard memristor data; circuit model; constant intrinsic resistivity; doped region resistance; linear drift model; memristor drift model; mobile vacancies conservation; numerical analysis; Conductivity; Integrated circuit modeling; Mathematical model; Memristors; Mobile communication; Numerical models; Resistance; linear drift model; memristor; numerical analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory (SSST), 2013 45th Southeastern Symposium on

Conference_Location

Waco, TX

ISSN

0094-2898

Print_ISBN

978-1-4799-0037-4

Type

conf

DOI

10.1109/SSST.2013.6524959

Filename

6524959