Complementary metal-oxide semiconductor doherty power amplifier based on voltage combining method

Author

Chenxi Zhao ; Byungjoon Park ; Bumman Kim

Author_Institution

Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea

Volume

8

Issue

3

fYear

2014

fDate

February 18 2014

Firstpage

131

Lastpage

136

Abstract

A 1.75 GHz Doherty power amplifier (PA) is designed and implemented in a 0.18-μm complementary metal-oxide semiconductor (CMOS) process. This Doherty PA uses a voltage combining transformer to combine the output power and realise the load modulation which is different from conventional current combining Doherty amplifiers. The prototype has a power-added efficiency (PAE) of 31.6% at a maximum output power of 28.6 dBm from 3.4 V supply voltage. The PAE at 6 dB back-off is still high, about 25%. It shows clearly the efficiency enhancement at the power back-off point because of the Doherty operation. This is the first use of voltage combining techniques in CMOS Doherty PA design.

Keywords

CMOS integrated circuits; power amplifiers; transformers; CMOS Doherty PA design; CMOS process; complementary metal-oxide semiconductor; current combining Doherty amplifiers; frequency 1.75 GHz; load modulation; maximum output power; metal-oxide semiconductor Doherty power amplifier; power back-off point; power-added efficiency; voltage 3.4 V; voltage combining method; voltage combining transformer;

fLanguage

English

Journal_Title

Microwaves, Antennas & Propagation, IET

Publisher

iet

ISSN

1751-8725

Type

jour

DOI

10.1049/iet-map.2013.0241

Filename

6746596