Title :
A simulation-based study of gate misalignment effects in triple-material double-gate (TMDG) MOSFETs
Author :
Sarangi, Saumendra ; Bhushan, Shashi ; Krishna, S.G. ; Santra, Aparna ; Tiwari, P.K.
Author_Institution :
Dept. of Electron. & Commun. Eng., NIT Rourkela, Rourkela, India
Abstract :
In this work, a simulation based study of gate misalignment effects in triple-material double-gate (TMDG) MOSFETs is presented. An attempt is made to analyze the effects of gate misalignment on the front and back gates surface potential considering the misalignment for both the source and drain side. The surface potential profile for misaligned gate TMDG MOSFET is compared with its double and single material counterparts to predict the electrical parameters like threshold voltage roll-off. The surface potential profile is obtained through 2-D simulations by ATLAS™ from Silvaco Inc.
Keywords :
MOSFET; semiconductor device models; surface potential; 2D simulations; ATLAS from Silvaco Inc; TMDG MOSFET; back gates; drain side; front gates; gate misalignment effects; source side; surface potential profile; threshold voltage roll-off; triple-material double-gate MOSFET; Electric potential; Logic gates; MOSFET; Materials; Mathematical model; Numerical models; Threshold voltage; DIBL; Gate Misalignment; Short Channel Effects; TMDG;
Conference_Titel :
Automation, Computing, Communication, Control and Compressed Sensing (iMac4s), 2013 International Multi-Conference on
Conference_Location :
Kottayam
Print_ISBN :
978-1-4673-5089-1
DOI :
10.1109/iMac4s.2013.6526461
