• DocumentCode
    604847
  • Title

    A detailed IC package numerical model calibration methodology

  • Author

    Bornoff, R. ; Vass-Varnai, Andras

  • Author_Institution
    Mech. Anal. Div., Mentor Graphics, Richmond upon Thames, UK
  • fYear
    2013
  • fDate
    17-21 March 2013
  • Firstpage
    65
  • Lastpage
    70
  • Abstract
    Experimentally derived structure functions can be used to provide insights into the thermal resistances and capacitances heat experiences as it travels from a die through and beyond an IC package. A 3D “detailed” numerical model of the package that purports to explicitly represent the internal construction of the package requires material properties and geometric sizes to be accurately specified. A structure function derived from simulating the detailed numerical model can itself be compared to the experimentally derived reference example. Deviations between experimental and numerical SFs indicate error sites within the detailed model and an indication of whether the thermal resistances or thermal capacitances of the numerical would need to be increased or decreased to match the experimentally observed values. Iterative modifications of the detailed model, based on successive structure function comparisons, will achieve a fully calibrated detailed numerical package model.
  • Keywords
    calibration; integrated circuit packaging; iterative methods; IC package numerical model calibration methodology; capacitances heat experiences; die; iterative modifications; material properties; numerical package model; thermal capacitances; thermal resistances; Calibration; Capacitance; Microassembly; Numerical models; Temperature measurement; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2013 29th Annual IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    1065-2221
  • Print_ISBN
    978-1-4673-6427-0
  • Electronic_ISBN
    1065-2221
  • Type

    conf

  • DOI
    10.1109/SEMI-THERM.2013.6526807
  • Filename
    6526807