Title :
Statistical Analysis of Random Telegraph Signal Maximum Transition Amplitudes in an Irradiated CMOS Image Sensor
Author :
Gilard, O. ; Martin, Eric ; Nuns, T. ; Inguimbert, C. ; David, J.-P.
Author_Institution :
French Space Agency CNES, Toulouse, France
Abstract :
This paper aims to propose a new approach to model the Dark Current Random Telegraph Signal (DC-RTS) maximum transition distribution in irradiated CMOS Image Sensors (CIS). Based on some outcomes of the Extreme Value Theory (EVT), it can be used to predict this distribution at the end of a given space mission. An example of application of this methodology is presented in detail.
Keywords :
CMOS image sensors; statistical analysis; telegraphy; CIS; DC-RTS; EVT; dark current random telegraph signal maximum transition distribution; extreme value theory; irradiated CMOS image sensor; random telegraph signal maximum transition amplitude; space mission; statistical analysis; CMOS image sensors; Dark current; Data models; Protons; Radiation effects; Statistical analysis; Temperature measurement; CMOS image sensors (CIS); dark current; proton irradiation; random telegraph signal (RTS);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2309480
