• DocumentCode
    60500
  • Title

    Statistical Analysis of Random Telegraph Signal Maximum Transition Amplitudes in an Irradiated CMOS Image Sensor

  • Author

    Gilard, O. ; Martin, Eric ; Nuns, T. ; Inguimbert, C. ; David, J.-P.

  • Author_Institution
    French Space Agency CNES, Toulouse, France
  • Volume
    61
  • Issue
    2
  • fYear
    2014
  • fDate
    Apr-14
  • Firstpage
    939
  • Lastpage
    947
  • Abstract
    This paper aims to propose a new approach to model the Dark Current Random Telegraph Signal (DC-RTS) maximum transition distribution in irradiated CMOS Image Sensors (CIS). Based on some outcomes of the Extreme Value Theory (EVT), it can be used to predict this distribution at the end of a given space mission. An example of application of this methodology is presented in detail.
  • Keywords
    CMOS image sensors; statistical analysis; telegraphy; CIS; DC-RTS; EVT; dark current random telegraph signal maximum transition distribution; extreme value theory; irradiated CMOS image sensor; random telegraph signal maximum transition amplitude; space mission; statistical analysis; CMOS image sensors; Dark current; Data models; Protons; Radiation effects; Statistical analysis; Temperature measurement; CMOS image sensors (CIS); dark current; proton irradiation; random telegraph signal (RTS);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2014.2309480
  • Filename
    6782349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=60500